Computational Physics
& Materials Design Laboratory

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70.

Y. Xing*, I. Kim*, K. T. Kang*, B. Park, Z. Wang, J. Kim, H. Jeong, W. Choi*, J. Lee*, S. Oh*.

Atomic-scale operando observation of oxygen diffusion during TPT of a perovskite oxide. 

Matter 5, 3009-3022 (2022). 

69.

S. Kang*, W. S. Jang*  et al.

Highly enhanced ferroelectricity in HfO2-based FE thin film by light ion bombardment. 

Science, 376, 731-738 (2022).

68.

D. Lee, S. Song, T. Min, H. Kim, J. Kim, S.Han, J.S Bae, J. H. Lee, Y. Kim, J. Lee, J. H. Jang, J. Lee, S. park.

Oxygen point defect stabilized metastable M3-phase VO2 films. 

Applied Materials Today, 27, 101474 (2022). 

67.

K. Kang, J. Byun, M. Jeen, G. Jo, Y. K. Baek, Y. K. Beak, J. Lee, H. Jeen.

Effect of sintering time on electronic properties of strontium hexaferrite. 

Ceramics International, 48, 12476-12482 (2022). 

66.

W. Li, J. Lee, A. A. Demkov.

Extrinsic magnetoelectric effect at the BTO/Ni interface. 

Journal of Applied Physics, 131, 054101 (2022). 

65.

W. S. Jang*, Y. Jin*, Y. H. Kim*,  S.H. Yang, S. J. Kim, J. A. Hong, J. Baik, J. Lee*, H. Lee*, Y. M. Kim*

Site-selective doping mechanisms for the enhanced photocatalytic activity of SnO2.

Applied Catalysis B: Environmental, 305, 121083 (2022). 

64.

S. Cho*, J. Kim, I. Jo, J. H. Park, J. Lee, H. U. Hong, B. H. Lee, W. R. Hwang, D. W. Suh, S. K. Lee, S. B. Lee

Effect of Mo on interfacial properties of TiC reinforced Fe composite. 

Journal of Materials Science & Technology, 107, 252-258 (2022). 

63.

K. Lee, J. Byun, K. Park, S. Kang, M. S. Song, J. Park, J. Lee, S. C. Chae.

Giant tunneling electroresistance in epitaxial ferroelectric ultrathin films directly integrated on Si. 

Applied Materials Today, 26, 101308 (2022). 

62.

S. E. Lee, S. Y. Jung, J. Seo, J. H. Joo, J. Lee, Y. M. Kim, K. H. Lee, Y. I. Kim, H. J. Park.

Anomalous electronic and protonic conductivity of 2D TiO2 and low temperature power generation using its protonic conduction.

Advanced Materials Interfaces, 8, 2101156 (2021). 

61.

D. Lee, T. Min, J. Kim, S. Song, J. Lee, H. Kang, J. Lee, D. Y. Cho, J. Lee, J. H. Jang, S. Park.

Octahedral symmetry modification induced orbital occupancy variation in VO2. 

 J. Phys. Chem. Lett. 13, 1, 75-82 (2021). 



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